Dr. Ashish Rai
Angestellt, Senior Staff Engineer, ams OSRAM Deutschland
Regensburg, Deutschland
Werdegang
Berufserfahrung von Ashish Rai
Micro LED development based on AsP material
2 Jahre und 9 Monate, Okt. 2015 - Juni 2018
Senior Epitaxy Engineer
Crystalline Mirror Solutions GmbH
Senior Epitaxy Engineer
Product quality and advanced process support for III-V semiconductor (GaN based materials) for LED development
10 Monate, Apr. 2013 - Jan. 2014
Postdoctoral Research Associate
TUE
Epitaxial Growth of III-V semiconductor on MOCVD tool for the development of laser diode for emission wavelength 2.5 μm range based on InP materials. I was responsible for the epitaxial growth and the charaterization of the epi-layers using XRD, AFM and PL.
Ausbildung von Ashish Rai
5 Jahre und 1 Monat, März 2008 - März 2013
Semiconductor Physics
Ruhr-Universität Bochum
Different kind heterostructure growth using MBE (RIBER) for III-arsenide materials Device fabrication using UV lithography technique, ion beam implantation Characterization of the optoelectronic devices
2 Jahre, Juli 2005 - Juni 2007
Physics
IITD
Physics
Sprachen
Englisch
Fließend
Deutsch
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