Dr. Christian Schlünder
Angestellt, Principal Engineer Reliability & Qualification/ Post Silicon IP Component Qual., Infineon Technologies AG, Munich
Neubiberg, Deutschland
Werdegang
Berufserfahrung von Christian Schlünder
Bis heute 6 Jahre und 6 Monate, seit 2018
Principal Engineer Reliability & Qualification/ Post Silicon IP Component Qual.
Infineon Technologies AG, Munich
Qualification-Team Head, Quality Assurance / Management; Post silicon Qualification of IP Components as Embedded Memories (SRAMs, ROMs, OTPs, eFuses, etc.) of in-house Technologies, newest Silicon Foundry Technologies and 3rd party IPs; IP Qualification Methodology, HTOL Methodology, Circuit Reliability Research, Circuit Aging Simulation and Modelling, Transistor Aging and Variability Research, Supervisor for (PhD) Students; Department: Design Enablement and Services / Silicon Verification & Qualification
2011 - 2018
Senior Staff Engineer Reliability / Quality Management / Reliability Research
Infineon Technologies AG, Munich
Quality Managment, Quality Assurance, Core-team member technology; Qualification of in-house and Silicon Foundry CMOS & smart power technologies for industrial and automotive applications; Front End Reliability Research, Circuit Reliability Research, Aging Simulation, Design for Reliability; Department: Operations / Quality Managment / Reliability
2005 - 2011
Staff Engineer Reliability, FE Technology Reliability Qualification & Research
Infineon Technologies AG, Munich
Front End Technology Qualifications of in-house and Silicon Foundry Technologies; Front End Reliability Research; MOSFET Aging; Department: Enabling Technologies & Services / Reliability
2000 - 2005
Senior Engineer, Device Qualification
Infineon Technologies AG, Munich
Device Reliability Qualifications / Device Reliability Research; NBTI and HCS modelling; Department: Corporate Logic / Technical Services / Reliability Methodology
1999 - 2000
Development Engineer, Corporate Research, Device Reliability
Infineon Technologies AG, Munich
Corporate Research Department (CPR), Microelectronic; HCS and NBTI device reliability research, Mixed Signal Applications
1998 - 1999
Werkstundent -> Diplomand -> Entwicklungs-Ingenieur
Cooperative program between Siemens Central Research labs Munich and TU Dortmund
Forschungsarbeiten im Bereich Halbleiterzuverlässigkeit von aktiven Bauelementen; speziell Hot Carrier Stress in Digital- und Mixed Signal Applikationen (HCS, BTS, NBTI); Diploma Thesis: "Degradations- und Relaxationsmechanismen in p-MOS Transistoren nach "Bias Temperature Stress"; Dept.: Central Research Labs (Zentralabteilung Technik Mikrolektronik)
Ausbildung von Christian Schlünder
2001 - 2006
Electrical Engineering
Technical University of Dortmund
doctorate accompanying to his regular work at Infineon Technologies; Doctoral thesis: "Zuverlässigkeit von sub-µm-CMOS Schaltungen bei Bias-Temperature-Stress (BTS)"
1993 - 1999
Elektrotechnik
Technical University of Dortmund
Focus: Mikroelektronics
Sprachen
Deutsch
Muttersprache
Englisch
Fließend
Französisch
Grundlagen