Dr. Christian Schlünder

Angestellt, Principal Engineer Reliability & Qualification/ Post Silicon IP Component Qual., Infineon Technologies AG, Munich

Neubiberg, Deutschland

Werdegang

Berufserfahrung von Christian Schlünder

  • Bis heute 6 Jahre und 6 Monate, seit 2018

    Principal Engineer Reliability & Qualification/ Post Silicon IP Component Qual.

    Infineon Technologies AG, Munich

    Qualification-Team Head, Quality Assurance / Management; Post silicon Qualification of IP Components as Embedded Memories (SRAMs, ROMs, OTPs, eFuses, etc.) of in-house Technologies, newest Silicon Foundry Technologies and 3rd party IPs; IP Qualification Methodology, HTOL Methodology, Circuit Reliability Research, Circuit Aging Simulation and Modelling, Transistor Aging and Variability Research, Supervisor for (PhD) Students; Department: Design Enablement and Services / Silicon Verification & Qualification

  • 2011 - 2018

    Senior Staff Engineer Reliability / Quality Management / Reliability Research

    Infineon Technologies AG, Munich

    Quality Managment, Quality Assurance, Core-team member technology; Qualification of in-house and Silicon Foundry CMOS & smart power technologies for industrial and automotive applications; Front End Reliability Research, Circuit Reliability Research, Aging Simulation, Design for Reliability; Department: Operations / Quality Managment / Reliability

  • 2005 - 2011

    Staff Engineer Reliability, FE Technology Reliability Qualification & Research

    Infineon Technologies AG, Munich

    Front End Technology Qualifications of in-house and Silicon Foundry Technologies; Front End Reliability Research; MOSFET Aging; Department: Enabling Technologies & Services / Reliability

  • 2000 - 2005

    Senior Engineer, Device Qualification

    Infineon Technologies AG, Munich

    Device Reliability Qualifications / Device Reliability Research; NBTI and HCS modelling; Department: Corporate Logic / Technical Services / Reliability Methodology

  • 1999 - 2000

    Development Engineer, Corporate Research, Device Reliability

    Infineon Technologies AG, Munich

    Corporate Research Department (CPR), Microelectronic; HCS and NBTI device reliability research, Mixed Signal Applications

  • 1998 - 1999

    Werkstundent -> Diplomand -> Entwicklungs-Ingenieur

    Cooperative program between Siemens Central Research labs Munich and TU Dortmund

    Forschungsarbeiten im Bereich Halbleiterzuverlässigkeit von aktiven Bauelementen; speziell Hot Carrier Stress in Digital- und Mixed Signal Applikationen (HCS, BTS, NBTI); Diploma Thesis: "Degradations- und Relaxationsmechanismen in p-MOS Transistoren nach "Bias Temperature Stress"; Dept.: Central Research Labs (Zentralabteilung Technik Mikrolektronik)

Ausbildung von Christian Schlünder

  • 2001 - 2006

    Electrical Engineering

    Technical University of Dortmund

    doctorate accompanying to his regular work at Infineon Technologies; Doctoral thesis: "Zuverlässigkeit von sub-µm-CMOS Schaltungen bei Bias-Temperature-Stress (BTS)"

  • 1993 - 1999

    Elektrotechnik

    Technical University of Dortmund

    Focus: Mikroelektronics

Sprachen

  • Deutsch

    Muttersprache

  • Englisch

    Fließend

  • Französisch

    Grundlagen

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