Pawan Sriperumbuduri venkata
Angestellt, Guest Scientist, Ferdinand Braun Institute, Leibniz Institute for High Frequency Technology
Berlin, Deutschland
Über mich
I have four years of experience in MMIC design and HBT modelling. I am highly self-motivated and can quickly adapt to new situations. I have experience in RF design, EM simulation and layout. I have modelled and improved the HBT device for switching applications.
Werdegang
Berufserfahrung von Pawan Sriperumbuduri venkata
Bis heute 5 Jahre und 5 Monate, seit Feb. 2019
Guest Scientist
Ferdinand Braun Institute, Leibniz Institute for High Frequency Technology
Responsible for HBT transistor modelling and MMIC design. The soft knee and switching region of the HBT model are improved significantly. An innovative EM simulation approach used to Extract Extrinsic Elements of Terahertz InP DHBTs Worked on designing of class E amplifier for achieving high efficiency in V & W band Theoretical analysis of switching performance of HBT devices at W band
Ausbildung von Pawan Sriperumbuduri venkata
2 Jahre und 7 Monate, Apr. 2016 - Okt. 2018
Wireless Communiction
Technical University of Denmark
Thesis: Design and Analysis of a 300 GHz Integrated Power Amplifier -Design and optimize the class A power amplifier with 13.3 dBm output power at 300 GHz -Layout verification using EM simulation and performing stability analysis -Designing power combiners Other Projects: Optimisation of InP DHBT Cacode cell for 300 GHz Power Amplifier Designing Sub-Quater-Wavelength Balun at 162.5 GHz
4 Jahre und 9 Monate, Aug. 2011 - Apr. 2016
Electrical and Electronics Engineering
PSG College of Technology