Dr. Srinidhi Embar
Angestellt, Senior RF Engineer, NXP Semicondutors
Tempe, Vereinigte Staaten
Werdegang
Berufserfahrung von Srinidhi Embar
Bis heute 8 Jahre und 7 Monate, seit Dez. 2015
Senior RF Engineer
NXP Semicondutors
High efficiency GaN/LDMOS Power Amplifier design for cellular Basestation applications
4 Jahre, Dez. 2011 - Nov. 2015
RF Wireless Development Engineer
Freescale Semiconductor Inc.
High efficiency Power Amplifier design for cellular Basestation applications
4 Monate, Juli 2011 - Okt. 2011
Test & Development Engineer R&D
Infineon Technologies AG
Design and development of CaTV- and L-Band optical links, splitters/combiners, switches upto 8GHz
2 Jahre und 6 Monate, Jan. 2007 - Juni 2009
Research Assistant
University of Kassel
German Research Foundation (DFG) Project
1 Jahr und 9 Monate, Aug. 2006 - Apr. 2008
Research Assistant
University of Kassel
German Ministry of Research and Technology (BMBF) Project “mobileGaN”
1 Jahr und 9 Monate, Jan. 2005 - Sep. 2006
Research Assistant
University of Kassel
German Ministry of Research and Technology (BMBF) Project “GaN electronics”
5 Monate, Juli 2004 - Nov. 2004
Intern
Fraunhofer Institute for Integrated Circuits (IIS)
Development and verification of digital predistortion for linearization of Universal Mobile Telecommunications System (UMTS) basestation power amplifiers with memory using neural networks.
Ausbildung von Srinidhi Embar
4 Jahre, Jan. 2005 - Dez. 2008
Microwave/HF Engineering
University of Kassel
2 Jahre und 4 Monate, Apr. 2002 - Juli 2004
Electrical Communication Engineering
Universität Kassel
4 Jahre, Nov. 1997 - Okt. 2001
Electronics and Communication
Bangalore University, India
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