Tsung-Han Lin

Conformal deposition of single-crystalline and conductive metal silicide on Si wafer for semiconductor technology via a colloidal approach • Generated a conformal, conductive, and single-crystalline metal silicide layer based on the chemical solution technique. • Elucidated the importance of the surface by microstructural surface analysis (TEM, SEM, and AFM). • Initiated an interdisciplinary team with electrical engineer in EPFL and chemical engineer in ETH for device build-up.

Process Engineer, Chemical Mechanical Polishing process • Increased wafer productivity up to 15% by optimizing the Chemical Mechanical Polishing process. • Generated the revenue up to 150,000 USD/year by improving receiving modes for laser signals via teamwork.

Chemistry in semiconductor technology Colloidal nanoparticle synthesis Metal silicide layer fabrication and characterization Microscopy (TEM/SEM/AFM) and spectroscopy (IR/XPS/XRD) analysis on wafer surface Conformal deposition of metal silicide

Elucidated the role of inorganic nanoparticles (Cu2S and CdSe) in improving PCE quantitatively by small angle X-ray scattering and examined the structure of polymer and fullerene during annealing to increase the PCE by 31%.

Colloidal synthesis (hot-injection) of TiO2 nanorods and nanoparticles in order to fabricate the hybrid heterojunction solar cell with conducting polymer P3HT and surface modification using light-absorbing dye to enhance the current density of the P3HT/TiO2 system